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  1 gaas mmic power amplifier 2.0 - 6.0 ghz rev. v7 maam26100-b1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ?? saturated power: 30.5 dbm typical ?? gain: 19 db typical ?? power added efficiency: 30% ?? dc decoupled rf input and output ?? lead-free 7-lead ceramic package ?? rohs* compliant and 260c reflow compatible description the maam26100-b1 is a gaas mmic two stage high efficiency power amplifier in a small, lead-free, 7-leadceramic package. the maam26100-b1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. the maam26100-b1 is ideally suited for driver amplifiers and transmitter outputs in umts applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. the maam26100-b1 is fabricated using a mature 0.5-micron gate length gaas process. the process features full passivation for increased performance reliability. ordering information part number package maam26100-b1 7 lead, ceramic (cr-2) maam26100-b1g 7 lead, ceramic (cr-2) with gull wing pin configuration pin no. function pin no. function 1 v gg 5 v d1 2 rf output 6 internal ground 3 internal ground 7 rf input 4 v d2 absolute maximum ratings 1,2 parameter absolute maximum v dd +9 v v gg -6 v to -3 v rf input power +17 dbm channel temperature 150c storage temperature -65c to +150c 1. exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. m/a-com tech does not recommend sustained operation near these survivability limits. 3. nominal bias is obtained by first connecting ?5 volts to pin 1 (v gg ), followed by connecting +8 volts to pin 5 (v d1 ) and pin 4 (v d2 ). note sequence. 4. rf ground and thermal interface are the case bottom. adequate heat sinking is required. functional diagram 3,4 7 rf in 2 rf out v gg 1 6 3 v dd 1000 pf 1000 pf 4 5 * restrictions on hazardous substanc es, european union directive 2002/95/ec.
2 gaas mmic power amplifier 2.0 - 6.0 ghz rev. v7 maam26100-b1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications: t a = 25c, v dd = +8 v, v gg = -5 v, z 0 = 50 ? parameter test conditions units min. typ. max. small signal gain 2 - 6 ghz db 15 19 ? input vswr input power +14 dbm, 2 - 6 ghz ratio ? 1.7:1 2.1:1 output vswr input power +14 db m, 2 - 6 ghz ratio ? 2.2:1 ? saturated output power input power +14 dbm, 2 - 6 ghz dbm 29 30.5 ? output power at 1 db gain compression 2 - 6 ghz dbm ? 27 ? power added efficiency ? % ? 30 ? third order intercept 2 - 6 ghz dbm ? 39 ? reverse isolation 2 - 6 ghz db ? 30 ? i dsq no rf ma ? 390 ? i ds input power +14 dbm ma 300 475 650 i gg input power +14 dbm ma ? 10 ? thermal resistance 5 ? c/w ? 16.5 ? 5. attachment method not included. lead-free cr-2 ? lead-free cr-2 w/ gull wing ? ? reference application note m538 for l ead-free solder reflow recommendations. meets jedec moisture sensitivity level 1 requirements.


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